High rate chemical vapor deposition of carbon films using fluorinated gases
US5198263A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1991 |
| Grant date | Mar 30, 1993 |
| Priority date | — |
| Expiry date | Mar 15, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S427/106
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.