Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
US5198269A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1989 |
| Grant date | Mar 30, 1993 |
| Priority date | — |
| Expiry date | Aug 28, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2111/90
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for producing a thin film of a ferroelectric perovskite material having the steps of providing a first substrate; depositing a first layer of a sol-gel perovskite precursor material wherein the crystallization of this precursor material to the pervoskite phase is insensitive to the first substrate; depositing a second layer of a sol-gel perovskite precursor material wherein the crystallization is sensitive to the first substrate; and heat-treating the deposited layers to form ferroelectric perovskites. A heat treatment step to form perovskites may optionally follow the deposition of the first layer. The first layer of sol-gel perovskite precursor material is selected to produce a perovskite upon heat treatment of: lead titanate (PbTiO.sub.3), or strontium titanate (SrTiO.sub.3). The second layer of sol-gel perovskite precursor material is selected to produce a perovskite upon heat treatment of: lead zirconate titanate (Pb(Zr,Ti)O.sub.3), lead zirconate (PbZrO.sub.3), lead lanthanum titanate ((Pb,La)TiO.sub.3), lead lanthanum zirconate ((Pb,La)ZrO.sub.3), lead lanthanum zirconate titanate ((Pb,La)(Zr,Ti)O.sub.3), lead magnesium niobate (Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3), le…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.