Method for producing an infrared detector

US5198370A · kind A · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Yuji Ohkura · Tokyo, JP
• Tohru Takiguchi · Tokyo, JP

Key dates

• Filing date: Feb 4, 1992
• Grant date: Mar 30, 1993
• Expiry date: Feb 4, 2012

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/971

Abstract

In a method of producing an infrared detector, a first conductivity type semiconductor layer, in which lattice vacancies acting as first conductivity type carriers are formed by evaporation of an element during annealing, is formed on a substrate and dopant impurities producing a second conductivity type are diffused in an annealing step from the impurity layer into the first conductivity type semiconductor layer to form pixel regions. During the diffusion, the surface of the first conductivity type compound semiconductor layer corresponding to non-pixel regions is exposed. In the regions of the first conductivity type semiconductor layer which becomes non-pixel regions, the first conductivity type carrier concentration increases due to the lattice vacancies generated by the evaporation of an element and, even when the dopant impurity is diffused into these regions, these regions remain first conductivity type regions.