Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
US5198371A · kind A · utility
124Cited by
3References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 24, 1990 |
| Grant date | Mar 30, 1993 |
| Priority date | — |
| Expiry date | Sep 24, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/953
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.