Semiconductor integrated circuit and method of making the same

US5198880A · kind A · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Minoru Taguchi · Yokohama, JP
• Hiroshi Mochizuki · Yokohama, JP

Key dates

• Filing date: Oct 28, 1991
• Grant date: Mar 30, 1993
• Expiry date: Oct 28, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/401

Abstract

For providing a semiconductor integrated circuit device including CCD type, bipolar type and MOS type integrated circuits in only one chip, island-shaped epitaxial layers of opposite conductivity type are disposed in a semiconductor substrate of one conductivity type having a low impurity concentration. A field oxide layer is provided so as to surround a periphery of an exposed surface of each epitaxial layer. A buried layer of opposite conductivity type having a high impurity concentration is is interposed between the semiconductor substrate and each epitaxial layer in such a manner that at least one edge thereof terminates to the lower surfaace of the field oxide layer. The CCD type integrated circuit is provided in the semiconductor substrate, and the bipolar type and MOS type integrated circuits are arranged in the epitaxial layers.