Ion implantation in metal alloys
US5199999A · kind A · utility
3Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1991 |
| Grant date | Apr 6, 1993 |
| Priority date | — |
| Expiry date | Dec 18, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12458
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for ion implantation of relatively high concentrations of alloying elements into a metal target without sputtering the target, in which the target is precoated with a layer of preselected thickness of a light, low sputtering yield element such as carbon, which is ablated during the ion implantation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.