Metalorganic chemical vapor deposition of superconducting films
US5200388A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 1990 |
| Grant date | Apr 6, 1993 |
| Priority date | — |
| Expiry date | Jun 22, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/734
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An oxide superconducting film is formed by CVD. The starting material gas sources are Ba(DPM).sub.2, Ba(DPM).sub.2 .multidot.(THF).sub.n or Ba(DPM).sub.2 .multidot.(DMF).sub.n ; Cu(DPM).sub.2, Cu(DPM).sub.2 .multidot.(THF).sub.n or Cu(DPM).sub.2 .multidot.(DMF).sub.n ; and M(DPM).sub.3, M(DPM).sub.3 .multidot.(THF).sub.n or M(DPM).sub.3 .multidot.(DMF).sub.n, where PA1 DPM is 2,2,6,6-tetramethyl-3,5-heptaneodianate represented by the chemical formula: EQU CH.sub.3 C(CH.sub.3).sub.2 COCHCOC(CH.sub.3).sub.2 CH.sub.3 PA1 THF is tetrahydrofuran represented by the chemical formula: ##STR1## DMF is dimethylformamide represented by the chemical formula: EQU HCON(CH.sub.3).sub.2 PA1 M is an element chosen from the list: PA2 Y, La, Nd, Pm, Sm, Eu, Er, Gd, Tb, Dy, Ho, Tm, Yb and Lu, PA2 and n is any integer. The starting gas sources are introduced into a growth tank after gasification together with at least one of the gases O.sub.2, O.sub.3, or N.sub.2 O, and the oxide film being formed on a substrate placed in said growth tank.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.