Semiconductor device with isolating groove containing single crystalline aluminum wiring
US5200639A · kind A · utility
29Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 1991 |
| Grant date | Apr 6, 1993 |
| Priority date | — |
| Expiry date | May 29, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a device region, and a device separation region formed on a semiconductor substrate doped with impurities. And, the device separation region has a metal wiring formed on the surface of the device region or the back surface of the substrate. An aluminum region extending in the longitudinal direction connected to the metal wiring is formed within the device separation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.