Resistor structure and method of fabrication
US5200733A · kind A · utility
18Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1991 |
| Grant date | Apr 6, 1993 |
| Priority date | — |
| Expiry date | Oct 1, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A resistor in an integrated circuit having a conductive shield layer between the resistor and an insulative layer. The contacts of the resistor may also contact the conductive shield layer. The shield layer may be formed during a single or double level polysilicon bipolar transistor fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.