Process for enhanced intermetallic growth in IC interconnections
US5201454A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1991 |
| Grant date | Apr 13, 1993 |
| Priority date | — |
| Expiry date | Sep 30, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus (10) and method is provided for bonding wire (12) to the bond sites (28) of integrated circuits (14). In preferred embodiments a bond end (30) on gold wire (12) is bonded to aluminum bond pad (28). Apparatus (10) includes a high frequency ultrasonic energy source (20) designed to provide ultrasonic energy at frequencies from about 100 kHz to about 125 kHz. The ultrasonic energy is imparted to the bonding interface (32) via transducer (18) and capillary (16). The transducer (18) is modified in length and tool clamp point (40) is sited on transducer (18) so that the high frequency ultrasonic energy is at the antinodal point in its application to interface (32) and thus is optimized. In preferred embodiments of the process, the ultrasonic energy is applied at about 114 kHz. In this fashion, the bond formed between bond end (30) and bond pad (28) is optimized in terms of shear strength, bonding time and processing temperatures. Particularly beneficial results are noticed with respect to aluminum alloy bond pads such as Al, 2% Cu, which have been particularly troublesome in terms of intermetallic formation and bond strength in the prior art. Thus according to the invention,…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.