Patent · US Expired

Method for making tapered microminiature silicon structures

US5201992A · kind A · utility

103Cited by
12References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 8, 1991
Grant dateApr 13, 1993
Priority date
Expiry dateOct 8, 2011

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2209/0226
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Tapered silicon structures, of interest for use, e.g., in atomic force microscopes, in field-emission devices, and in solid state devices are made using silicon processing technology. Resulting tapered structures have, at their tip, a radius of curvature of 10 nanometers or less. Such preferred silicon structures are particularly suited as electron emitters in display devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.