Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species
US5202283A · kind A · utility
10Cited by
11References
36Claims
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Key dates
| Filing date | Feb 19, 1991 |
| Grant date | Apr 13, 1993 |
| Priority date | — |
| Expiry date | Feb 19, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for organic free radical, including aliphatic radical, transport of dopant species for precise, predetermined, and reproducible doping concentrations to control electrical properties for chemical vapor deposition grown materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.