Process for manufacture of quantum dot and quantum wire semiconductors
US5202290A · kind A · utility
Inventor
Key dates
| Filing date | Dec 2, 1991 |
| Grant date | Apr 13, 1993 |
| Priority date | — |
| Expiry date | Dec 2, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Quantum dot and quantum wire semiconductors in the nanosize range are produced by a process which utilizes a microporous aluminum oxide surface layer on an aluminum metal substrate as a template for the semiconducting material. The microporous surface layer is prepared by anodizing an aluminum substrate in an acid bath. Then a metal capable of forming a semiconductor compound is electrodeposited into the surface micropores, the oxide is partially or wholly etched away, and the deposited metal is reacted with a liquid or gaseous reagent to convert it chemically to a semiconducting compound. By the process of the invention, there are produced quantum dot or quantum wire semiconductors in the form of an array of substantially mutually parallel, substantially uniform-sized rods of semiconductor material protruding from an electrically conductive substrate, each rod having a diameter less than 100 nanometers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.