Magnetron sputtered boron films and TI/B multilayer structures
US5203977A · kind A · utility
9Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1991 |
| Grant date | Apr 20, 1993 |
| Priority date | — |
| Expiry date | Mar 11, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.