Thick film resistor composition, hybrid IC using the composition, and process for producing the hybrid IC
US5204166A · kind A · utility
6Cited by
2References
23Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 25, 1991 |
| Grant date | Apr 20, 1993 |
| Priority date | — |
| Expiry date | Feb 25, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/256
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a thick film resistor material which is suitable especially for thick film hybrid IC having conductor, resistor, semiconductor element and the like in which Cu is used as the conductor and furthermore, a thick film resistor composition which can be fired in a reducing atmosphere. The present invention further relates to a thick film hybrid IC using the thick film resistor composition as a resistor and a method for making it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.