Method of making a high band-gap opto-electronic device
US5204284A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1991 |
| Grant date | Apr 20, 1993 |
| Priority date | — |
| Expiry date | Aug 13, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/936
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high band-gap opto-electronic device is formed by epitaxially growing the device section in a lattice-matched (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P-GaAs system. The band-gap of the epitaxial layer increases with x. Instead of growing the device section directly on the GaAs substrate, a layer of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P, graded in x and in temperature while maintaining substantially y=0.5, is grown as a transitional layer. The high band-gap device structures include homojunctions, heterojunctions and particularly a separate confinement quantum well heterostructures. Various embodiments of the invention include devices on absorbing substrates and on transparent substrates, and devices incorporating strained-layer superlattices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.