GaAS-based optoelectronic neurons
US5204521A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1992 |
| Grant date | Apr 20, 1993 |
| Priority date | — |
| Expiry date | Mar 3, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N3/0675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated, optoelectronic, variable thresholding neuron implemented monolithically in a GaAs integrated circuit and exhibiting high differential optical gain and low power consumption. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field-effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy or 38 pJ. Power consumption is 2.4 mW and 1.8 mW, respectively. Input "light" power needed to turn on the LED is 2 .mu.W and 54 nW, respectively. In both embodiments the detector is in series wit…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.