Method of implementation of surface-emission semiconductor lasers, and lasers obtained by the method
US5204870A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1991 |
| Grant date | Apr 20, 1993 |
| Priority date | — |
| Expiry date | Dec 13, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4043
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a method of implementation of surface-emission laser diodes with multiple quantum wells, including a single epitaxy step and a single step of implantation and diffusion of doping impurities. The transverse dimensions of the laser are determined by application of a mask on the active region before the implantation of said doping impurities around said active region, thus avoiding the conventional step of chemical etching with its detrimental effects on the expected lifetime of the finished laser. The construction of the laser of the invention allows to optimize separately the characteristics of optical confinement (along the axis of propagation of the laser light) and of confinement of the charge carriers in said active region (perpendicularly to said axis of propagation). The thicknesses of the layers of a first distributed Bragg mirror and of the layers of said active region (quantum wells and intermediate layers or superlattices) are chosen so as to optimize the gains (in each quantum well) and to minimize the losses (in particular in said mirror) so as to optimize the threshold current and the energy efficiency of the laser. The invention also relates to…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.