Process and device for the deposition of thin layers and product made thereby
US5206060A · kind A · utility
9Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1990 |
| Grant date | Apr 27, 1993 |
| Priority date | — |
| Expiry date | Aug 9, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C17/38
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
This invention relates to a process and a device for the deposition of thin layers on a substrate using a plasma-CVD technique. The substrate itself, which previously has been made conductive by the deposition of conductive layers, is used as an electrode to create the discharge. In particular, the technique can be applied to the deposition of organosilicon layers on glass plates of large dimensions. The invention also relates to a glass substrate covered by thin layers including at least one metal layer, in particular silver, on which the organosilicon layer is deposited according to the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.