Processes for the production of a controlled atmosphere for heat treatment of metals
US5207839A · kind A · utility
6Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1991 |
| Grant date | May 4, 1993 |
| Priority date | — |
| Expiry date | Oct 15, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P10/122
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Substantially all residual oxidizing gas in a treating atmosphere which is inert or reducing, is eliminated by injecting into the atmosphere a gaseous silicon hydride at a temperature between 50 and 1,600.degree. C. and in amount such that the ratio R of the content of hydride to the content of oxidizing gas to be eliminated is within the range of 1.5 to 20. The rapid action of the trace amounts of hydride injected enables one to control with precision heat treatment processes by maintaining the residual oxidizing gas contents below predetermined very low thresholds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.