Anisotropic single crystal silicon etching solution and method
US5207866A · kind A · utility
21Cited by
7References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 17, 1991 |
| Grant date | May 4, 1993 |
| Priority date | — |
| Expiry date | Jan 17, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of anisotropically etching single crystal silicon includes providing single crystal silicon to be etched and placing it in an etching solution consisting essentially of R.sub.4 NOH and solvent wherein R is an alkyl group having between 0 and 4 carbon atoms. The solution will preferentially etch <100> or <110> oriented single crystal silicon. Additionally, electrochemical etching may be employed to preferentially etch P type single crystal silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.