Metal film forming method
US5208187A · kind A · utility
25Cited by
3References
14Claims
0Family size
Inventors
Key dates
| Filing date | Jul 8, 1991 |
| Grant date | May 4, 1993 |
| Priority date | — |
| Expiry date | Jul 8, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal film forming method comprises steps of: PA0 forming a non-monocrystalline metal film principally composed of aluminum, in contact, at least in a part thereof, with a monocrystalline metal principally composed of aluminum; and PA0 heating the non-monocrystalline metal film to convert at least a part thereof into monocrystalline state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.