Method of cutting interconnection pattern with laser and apparatus thereof
US5208437A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 1991 |
| Grant date | May 4, 1993 |
| Priority date | — |
| Expiry date | May 9, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
In an interconnection film cutting method and apparatus therefor according to the present invention, a laser beam having a pulse width of 10.sup.-9 second or less is illuminated on a desired portion of the interconnection pattern of a semiconductor device, such as a link used for redundant operation of a defective bit in, for example, a LSI memory, or on a desired portion of the interconnection pattern of a large-scaled interconnection substrate through a transmission type liquid crystal mask in the form of a desired pattern so as to cut the interconnection pattern without damaging a layer disposed below the interconnection pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.