Input circuit of a semiconductor device
US5208474A · kind A · utility
7Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1991 |
| Grant date | May 4, 1993 |
| Priority date | — |
| Expiry date | Jan 28, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
An input circuit of a semiconductor device includes a P type well formed on the main surface of a semiconductor substrate, and an N type region formed on the main surface in the P type well. A P-N junction is formed by the N type region and the P type well. An input voltage is applied to the N type region, which input voltage is applied to an internal circuit formed on the semiconductor substrate. When the P-N junction is rendered conductive by an application of an excessive voltage to the input voltage, the current caused by the excessive voltage is absorbed to the supply potential through the P type region formed in the P well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.