Potential detecting circuit
US5208488A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1992 |
| Grant date | May 4, 1993 |
| Priority date | — |
| Expiry date | Aug 31, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A potential detecting circuit comprises a first MOS transistor of a first conductivity type whose drain receives an input potential that is equal to or lower, in absolute value, than a second potential whose absolute value is higher than that of a first potential, a second MOS transistor of a second conductivity type whose source is connected to the source of the first transistor and gate receives the first potential, a third MOS transistor of the first conductivity type whose source is connected to the second MOS transistor, source receives a reference potential whose absolute value is lower than that of the first potential, and gate receives the first potential, a detecting potential control block for applying to the first MOS transistor a potential varying in accordance with the input potential, and a potential detect output terminal for providing a detected potential, the potential detect output terminal being a junction between the drains of the second and third MOS transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.