Method for forming patterned films on a substrate
US5209815A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1991 |
| Grant date | May 11, 1993 |
| Priority date | — |
| Expiry date | Jun 6, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/048
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming patterned film onto a substrate includes the steps of: depositing a polyether sulfone release layer 50; depositing a photoresist underlayer 52; patterning a predetermined film pattern through the underlayer 52 and the polyether sulfone layer 50; depositing a film layer 60 onto the wafer, thereby forming a patterned film 62 on the substrate 10; weakening the mechanical bonding strength to the polyether sulfone release layer 50 by immersing it in NMP; stripping off layers 54 and 60 by applying an adhesive backed tape 64 to the top of the film layer and applying a pulling force; and, removing the polyether sulfone release layer 50 by immersing the wafer in a NMP bath.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.