Semiconductor device with input protection circuit of high withstand voltage
US5210436A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1991 |
| Grant date | May 11, 1993 |
| Priority date | — |
| Expiry date | Jul 5, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
A semiconductor device equipped with an input protection circuit having a high withstand voltage and an improved reliability. The input protection circuit of the semiconductor device includes a gate insulation film provided on the semiconductor substrate corresponding to a region between the source region and the drain region, having a thickness greater than that of a gate insulation film in the FET of the semiconductor device, where one of the source region and the drain region is connected with an external input terminal for the semiconductor device, while the gate electrode and the other one of the source region and the drain region are connected with a power source for the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.