Capacitive pressure sensor and method of manufacturing the same
US5211058A · kind A · utility
16Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1991 |
| Grant date | May 18, 1993 |
| Priority date | — |
| Expiry date | Oct 4, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/43
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
According to a capacitive pressure sensor and a method of manufacturing the same, first and second grooves are formed in one and the other surfaces of a substrate, respectively. A sacrificial layer is embedded in the first groove. Insulating films are formed on the substrate, on which the sacrificial layer is formed, to sandwich an electrode. Etching is performed to form a pressure introducing hole through the substrate to reach the sacrificial layer. A hollow portion is formed by removing the sacrificial layer through the pressure introducing hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.