Semiconductor metal composite field emission cathodes
US5211707A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 1991 |
| Grant date | May 18, 1993 |
| Priority date | — |
| Expiry date | Jul 11, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/929
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emission cathode having a parallel array of individual electrically conductive rods of metal silicide or germanide in a silicon-based or germanium-based single crystal matrix. Each rod has an emission end exposed at one major surface of the cathode and an ohmic contact end exposed at an opposite major surface. In a preferred cathode, the matrix and rod materials are the constituents of a eutectic composition. The cathode is fabricated by a process involving producing a composite boule from a eutectic composition of a silicon-based or germanium-based material and a metal. The composite cathode body is cut from the boule so that the rods are generally normal to the major surfaces. Etching may be used to expose a uniform length of the rods at the emitting surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.