Method for producing silicon single crystal from polycrystalline rod formed by continous casting
US5211802A · kind A · utility
25Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1991 |
| Grant date | May 18, 1993 |
| Priority date | — |
| Expiry date | Apr 1, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S423/16
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing single-crystal silicon is disclosed. Polycrystalline silicon rod is formed from polycrystalline silicon granules, lumps or a mixture thereof by continuous casting through electromagnetic induction. Then, silicon single cyrstal is grown from the polycrystalline silicon rod by the FZ method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.