Semiconductor device manufacturing method and semiconductor device manufactured thereby
US5212105A · kind A · utility
5Cited by
13References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1991 |
| Grant date | May 18, 1993 |
| Priority date | — |
| Expiry date | Dec 10, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device comprises the steps of forming a polysilicon spacer on an after-oxide film on a semiconductor substrate, doping the polysilicon spacer by ion-implanting an impurity such as phosphorus, thermally diffusing the impurity into the polysilicon spacer, and eliminating the polysilicon spacer in part by etching. A semiconductor device manufactured by this method is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.