Process for the selective epitaxy and etching of a III-V material in the same OMCVD growth frame

US5212113A · kind A · utility

Assignee

• France Telecom Etablissement Autonome de Droit Public (Centre National d'Etudes des Telecommunications) · FR

Inventors

• Rosette Azoulay · Fontenay-aux-Roses, FR
• Louis Dugrand · Chelles, FR

Key dates

• Filing date: Sep 16, 1991
• Grant date: May 18, 1993
• Expiry date: Sep 16, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

This process consists of depositing on a III-V or II-VI material (2) a mask layer (6), etching the latter in order to form therein openings (9) facing areas of the material on which epitaxy is to be carried out and then carrying out the epitaxy of the semiconductor layer (14) on said areas in an OMCVD frame by subjecting, at atmospheric pressure, the masked material simultaneously to vapours of chemical species of at least one III or II element and at least one V or VI element, as well as to vapours of HCl or at least one halide of a V or VI element, the elements III and V or II and VI of the chemical species and the halide being those which will form the semiconductor layer, said species being organometallic and/or hydrogen compounds. It is also possible, just prior to the epitaxy stage, to etch (12) the unmasked areas of the material, at atmospheric pressure, in the same frame as for the epitaxy using vapours of at least one halide of a III, V, II or VI element constituting the material to be etched.