Compound semiconductor wafer with defects propagating prevention means
US5212394A · kind A · utility
14Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1992 |
| Grant date | May 18, 1993 |
| Priority date | — |
| Expiry date | Aug 19, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/219
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A compound semiconductor epitaxial wafer has a heteroepitaxial crystal layer grown on a compound semiconductor crystal substrate which has a substantially circular configuration and is free of dislocation defects at least in a central area surrounded by a cut-off that prevents defects from propagating radially inwardly into said central area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.