Surface emitting lasers with low resistance bragg reflectors
US5212703A · kind A · utility
9Cited by
1References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 18, 1992 |
| Grant date | May 18, 1993 |
| Priority date | — |
| Expiry date | Feb 18, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical cavity surface emitting laser is disclosed including a lower cladding layer of a particular conductivity type deposited on the semiconductor substrate, having multiple periods of semiconductor layers of varying index cf refraction so deposited as to form a .lambda./2 Bragg reflector; and an upper cladding layer of opposite conductivity type having multiple periods of semiconductor layers of varying index of refraction so deposited as to form a multilayer reflector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.