AlAS Zn-stop diffusion layer in AlGaAs laser diodes
US5212705A · kind A · utility
14Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1992 |
| Grant date | May 18, 1993 |
| Priority date | — |
| Expiry date | Feb 18, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An AlGaAs-based semiconductor laser diode is disclosed which has a Zn-stop diffusion layer of p-type conductivity deposited on the active layer, having an Al content greater than 85%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.