Photovoltaic device
US5213628A · kind A · utility
100Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1991 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Sep 10, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic device includes a monocrystalline or polycrystalline semiconductor layer of one conductivity type, a substantially intrinsic substantially amorphous semiconductor layer having a predetermined thickness small enough to avoid producing carriers therein. The substantially intrinsic, substantially amorphous layer is formed on the one conductivity type semiconductor layer, and a substantially amorphous semiconductor layer of the opposite conductivity type is formed on the intrinsic, semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.