Method of improving the pyrolytic deposition rate of copper oxide film on a glass surface
US5213842A · kind A · utility
1Cited by
18References
1Claims
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Key dates
| Filing date | Jul 18, 1991 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Jul 18, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/17
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A pyrolitic deposition process, for pyrolitic deposition of organo-cupric powder to form copper oxide film, is improved. A substrate is heated, and organocupric powder is sprayed at the substrate, using oxygen gas as the carrier gas. Up to one-third greater deposition rate results, as compared to the process using compressed air as the carrier gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.