Method of manufacturing an image sensor
US5213984A · kind A · utility
6Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1991 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Oct 11, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A metal film and a doped a-Si film are deposited on a glass substrate, and successively etched by photolithography using the same resist pattern, to form a metal electrode and doped a-Si layers. The doped a-Si layers thus formed are then re-etched to remove portions protruding from the metal electrode. Then, a non-doped a-Si layer and a transparent electrode are successively formed on the doped a-Si layer. A protection film may additionally be deposited on the glass substrate before the deposition of the metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.