Process for making thin film silicon-on-insulator wafers employing wafer bonding and wafer thinning
US5213986A · kind A · utility
62Cited by
7References
8Claims
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Assignee
Inventors
Key dates
| Filing date | Apr 10, 1992 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Apr 10, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/012
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A very thin silicon film SOI device can be made utilizing a bond and etch-back process. In the presently claimed invention, boron dopant is introduced into a surface of a silicon device wafer and the doped surface is bonded onto another silicon wafer at an oxide surface. The device wafer is thinned by etching down to the doped region and, by subsequent annealing in hydrogen, boron is diffused out of the silicon surface layer to produce very thin SOI films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.