Method for making an ohmic contact for p-type group II-VI compound semiconductors
US5213998A · kind A · utility
23Cited by
4References
16Claims
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Key dates
| Filing date | May 15, 1991 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | May 15, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing an ohmic contact to a p-type ZnSe semiconductor body in a molecular beam epitaxy chamber. Zinc, thermally cracked Se.sub.2 and nitrogen are injected into the chamber. A ZnSe contact layer is grown by heating the semiconductor body to a temperature less than 250.degree. C., but high enough to promote crystalline growth of the layer doped with nitrogen to a net acceptor concentration of at least 1.times.10.sup.18 cm.sup.-3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.