Method of metal filled trench buried contacts
US5213999A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1990 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Sep 4, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/74
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench capacitor within an integrated circuit is provided which is filled with solid elemental metal. This metal-filled trench capacitor is formed by the following steps. First a trench is conventionally formed within a silicon substrate. A dielectric film is then blanket deposited onto the substrate and within the trench, so that the walls and bottom surface of the trench are completely covered. A metal-containing liquid solution is next deposited within the trench, and heated to a temperature sufficient to thermally decompose the metal compound within the liquid solution and drive off any solvent from the solution, thereby leaving a plate of elemental metal within the trench capacitor. The metal-filled capacitor is accordingly characterized by high electrical conductivity. The method may also be utilized to form a metal contact to a buried layer within an integrated circuit; a rectifying contact or Schottky diode; contacts to the substrate; metal diffusion barrier layer; and interconnection metallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.