Thermal transfer posts for high density multichip substrates and formation method
US5214000A · kind A · utility
40Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1991 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Dec 19, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0733
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Thermal post vias are formed within a formed multi-layer, high density interconnect including a base and plural layers of metal conductors separated by dielectric material by the steps of: PA0 removing in a single step dielectric material at predetermined sites of the thermal post vias to define substantially cylindrical post holes, and PA0 forming the thermal post vias by emplacing conductor material, such as metal, into the post holes so that the material fully occupies and fills up the holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.