Light emitting diode
US5214306A · kind A · utility
Assignees
Inventor
Key dates
| Filing date | Jan 22, 1992 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Jan 22, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
Abstract
A light emitting diode composed of a compound semiconductor containing aluminum having a GaAlAs layer and the like and having a structure which is superior in humidity resistance and has a long life. For example, in a double hetero light emitting diode constructed by comprising a p-GaAlAs layer, an n-GaAlAs layer, and an active layer interposed between both the GaAlAs layers, an oxide layer containing the oxide of gallium is provided inside of the surface excluding a portion where an electrode is provided of its semiconductor device, so that the surface of the device is stabilized. On the other hand, in the structure of a light emitting diode in which stepped portions are provided in the peripheral part of its semiconductor device, an oxide layer is provided inside of the surface of the device and inside of the peripheral part, and an insulating layer is formed on the oxide layer on the surface of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.