Nanosecond RF switch driver
US5214315A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 23, 1991 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Apr 23, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/74
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An extremely fast high-voltage driver for nanosecond-level switching of gallium arsenide PIN semiconductor devices and other reactive loads utilizes two stages of voltage level translation to permit low voltage TTL logic control signals to control the application of high voltage switching pulses to a load. The circuit utilizes an input stage responsive to TTL level signals to drive a first voltage level translating stage which produces high voltage pulses complementary to the input pulses. The increased voltage pulses are supplied through an intermediate power gain stage to provide amplification of the pulse power level. The amplified pulse is supplied to an output stage for additional level conversion to thereby provide high voltage switching signals to a PIN switch or other reactive load.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.