Polycrystalline silicon resistor for use in a semiconductor integrated circuit having a memory device
US5214497A · kind A · utility
21Cited by
24References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1991 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Apr 8, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
Abstract
A semiconductor device including a polycrystalline silicone resistor which has a resistance of 40 k.OMEGA.-800 k.OMEGA. and which is formed by a polycrystalline silicon film having a specific resistivity of 0.01 .OMEGA..cm-0.1 .OMEGA..cm. The resistor having the above resistance, which has previously been difficult to fabricate, can be fabricated with a high accuracy, so it is very useful for several kinds of semiconductor integrated circuits such as bipolar memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.