Optoelectric device on semi-insulator substrate and methods for making such a device
US5214661A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1991 |
| Grant date | May 25, 1993 |
| Priority date | — |
| Expiry date | Dec 9, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is an optoelectronic device on a semi-insulator substrate, of the type comprising, stacked on one another, at least: PA1 - one substrate made of semi-insulator material, PA1 - one lower confinement layer with a first type of conductivity, PA1 - at least one active layer in strip form, and PA1 - an upper confinement layer with a second type of conductivity. In this device, the lower confinement layer covers one side of the semi-insulator substrate in passing beneath the active layer and coming to a stop substantially vertically to this active layer and the upper confinement layer covers the other side of the semi-insulator substrate in passing over the active layer and coming to a stop substantially vertically to this active layer. The disclosure can be applied notably to the fabrication of lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.