Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers

US5216260A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Erdmann F. Schubert · Hazlet, US
• Klaus Ploog · Stuttgart, DE
• Albrecht Fischer · Löchgau, DE

Key dates

• Filing date: Jun 27, 1991
• Grant date: Jun 1, 1993
• Expiry date: Jun 27, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3408
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optically bistable semiconductor device which has a doped or undoped gallium arsenide substrate and a series of alternating n-type and p-type Dirac-delta doped monoatomic layers formed on the substrate. Each Dirac-delta doped monoatomic layer is separated from the next adjacent Dirac-delta doped monoatomic layer by a layer of pure, undoped intrinsic semiconductor material such as gallium arsenide.