High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
US5216263A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 29, 1990 |
| Grant date | Jun 1, 1993 |
| Priority date | — |
| Expiry date | Nov 29, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high density surface emitting semiconductor LED array comprises disordered regions extending through a second confinement layer, an active layer and partially extending through a first confinement layer to define light emitting areas therebetween the disordered regions. Individual contacts on the contact layer aligned with each emitting area inject current through the layers to a contact on a substrate causing emission of light from the active layer through the surface of the exposed first confinement layer in the substrate. The second confinement layer can be replaced with a DBR to form an enhanced LED array. Both confinement layers can be replaced with DBRs to form a laser array. A refractive semiconductor layer, fresnel lenses or a micro lens array can be used to optically modify the surface emitted light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.