Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact
US5216264A · kind A · utility
20Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1991 |
| Grant date | Jun 1, 1993 |
| Priority date | — |
| Expiry date | Sep 16, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A silicon carbide field-effect transistor is disclosed which includes an MOS structure composed successively of a silicon carbide layer, a gate insulator film, and a gate electrode. The field-effect transistor has source and drain regions formed in the silicon carbide layer, between which the MOS structure is disposed, wherein at least one of the source and drain regions is formed by the use of a Schottky contact on the silicon carbide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.