Semiconductor integrated circuit device having high matching degree and high integration density
US5216276A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 5, 1990 |
| Grant date | Jun 1, 1993 |
| Priority date | — |
| Expiry date | Dec 5, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device includes at least two bipolar transistors having a first type structure in which a wiring layer is formed in direct contact with the emitter region thereof and at least one bipolar transistor having a second type structure in which a polysilicon layer is formed on the emitter region thereof. The transistor having the first type structure is used in a circuit which is required to have a high matching degree. The transistor having the second type structure is used in a circuit which is required to have a high performance, low power consumption and high integration density rather than a high matching degree.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.